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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DRAWING (Unit : mm) FEATURES 6.5 0.2 5.0 0.2 1.6 0.2 1.5 -0.1 * Low on-resistance RDS(on)1 = 27 m (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 m (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 50 m (MAX.) (VGS = 4 V, ID = 10 A) * Low Ciss : Ciss = 860 pF (TYP.) * Built-in gate protection diode +0.2 2.3 0.2 0.5 0.1 4 1 23 1.3 MAX. 7.0 MIN. 5.5 0.2 13.7 MIN. 0.6 0.1 2.3 2.3 0.6 0.1 ORDERING INFORMATION PART NUMBER 2SK2981 2SK2981-Z PACKAGE TO-251 0.8 4.3 MAX. 1. 2. 3. 4. Gate Drain Source Fin (Drain) TO-251(MP-3) 1.5 -0.1 +0.2 0.75 6.5 0.2 5.0 0.2 2.3 0.2 0.5 0.1 12.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) Note 1.3 MAX. VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 20 20 80 20 150 -55 to + 150 V V A A W C C 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 MIN. 1. 2. 3. 4. Gate Drain Source Fin (Drain) TO-252(MP-3Z) (SURFACE MOUNT TYPE) Total Power Dissipation (Tc = 25 C) Channel Temperature Storage Temperature Note PW 10 s, Duty cycle 1 % EQUIVALENT CIRCUIT Drain 0.5 12 3 5.5 0.2 10.0 MAX. 4 1.0 MIN. 1.5 TYP. TO-252 Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D12355EJ1V0DS00 (1st edition) Date Published December 1998 NS CP(K) Printed in Japan (c) 1998 2SK2981 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 di/dt = 100 A/s ID = 20 A, VDD = 24 V, VGS = 10 V ID = 10 A, VGS(on) = 10 V, VDD = 15 V RG = 10 TEST CONDITIONS VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 10 A VGS = 4 V, ID = 10 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VDS = 30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V, VGS = 0, f = 1 MHz 860 350 160 25 270 65 65 20 3.5 6.5 0.8 35 30 1.0 6.0 MIN. TYP. 20 30 35 1.5 13.0 10 10 MAX. 27 40 50 2.0 UNIT m m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME D.U.T. RL VGS VGS Wave Form TEST CIRCUIT 2 GATE CHARGE D.U.T. IG = 2 mA PG. 90 % 90 % ID PG. RG RG = 10 0 ID 10 % VGS (on) 90 % RL VDD VDD 50 VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 0 10 % td (on) ton tr td (off) toff 10 % tf 2 Data Sheet D12355EJ1V0DS00 2SK2981 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 30 25 20 15 10 5 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 d ite ) Lim 0 V n) (o =1 DS GS RV t (a DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ID(PULSE)=80 A PW PW ID(DC)=20 A = 10 Po we PW rD iss = 0 = 10 m s s ID - Drain Current - A ID - Drain Current - A PW = 50 0 100 s 1 m 10 n m s 80 60 40 20 VGS =10.0 V ipa tio Lim ite d 4.5 V 4.0 V 1 0.1 0.1 TC = 25C Single Pulse 1 10 100 0 1 2 3 4 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1000 TA = -25C 25C 75C 125C Pulsed ID - Drain Current - A 100 10 1 0 2 4 6 8 VGS - Gate to Source Voltage - V Data Sheet D12355EJ1V0DS00 3 2SK2981 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-a) = 125 C/W 100 10 Rth(ch-c) = 6.25 C/W 1 0.1 0.01 0.001 Single Pulse TC = 25C 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 | yfs | - Forward Transfer Admittance - S 10 Tch = -25C 25C 75C 125C VDS = 10 V Pulsed 40 ID = 10 A 20 1 0.1 0.1 1 10 100 0 5 10 15 ID- Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m 80 Pulsed 60 VGS(off) - Gate to Source Cut-off Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA 1.5 40 VGS = 4.0 V 1.0 4.5 V 20 10.0 V 0 0.2 0.5 0 1 10 ID - Drain Current - A 100 - 50 0 50 100 150 Tch - Channel Temperature - C 4 Data Sheet D12355EJ1V0DS00 2SK2981 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed ISD - Diode Forward Current - A 100 VGS = 10 V 10 60 VGS = 4.0 V 40 4.5 V 10.0 V 20 ID = 10 A - 50 0 50 100 150 1 0V 0.1 0 Tch - Channel Temperature - C 0 1.5 1.0 0.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz tr tf 1000 Ciss 100 td(off) Coss 100 Crss 10 td(on) VDD = 15 V VGS = 10 V RG = 10 1 10 100 ID - Drain Current - A 10 0.1 1 10 100 1 0.1 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V 30 VDD = 24 V 15 V 6V 100 VGS 12 10 8 6 20 10 10 VDS 0 3 6 9 12 15 18 21 24 4 2 0 1 0.1 1 10 100 IF - Diode Current - A QG - Gate Charge - nC Data Sheet D12355EJ1V0DS00 VGS - Gate to Source Voltage - V di/dt = 100 A/s VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 20 A VGS = 10 V 14 5 2SK2981 [MEMO] 6 Data Sheet D12355EJ1V0DS00 2SK2981 [MEMO] Data Sheet D12355EJ1V0DS00 7 2SK2981 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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